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MLN1030SL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMLN1030SLisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: ?ClassAOperation ?PG=9.0dBat1.0W/1.0GHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

MLN1030SL

NPN SILICON RF POWER TRANSISTOR

ASI

Advanced Semiconductor

MLN1030SL_07

NPN SILICON RF POWER TRANSISTOR

ASI

Advanced Semiconductor

MLN1030SS

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMLN1030SSisDesignedforClassALinearApplicationsupto1.0GHz. FEATURES: ?ClassAOperation ?PG=10dBat1.0W/1.0GHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

MLN1030SS

NPNSILICONRFPOWERTRANSISTOR

ASI

Advanced Semiconductor

MMD-1030H

GaAsMMICDOUBLER

MARKIMICROWAVEMarki Microwave

馬基馬基微波

MMD-1030HSM

GaAsMMICDOUBLER

MARKIMICROWAVEMarki Microwave

馬基馬基微波

MRF1030

UHFPOWERTRANSISTOR

TheRFLine UHFPowerTransistor ...designedprimarilyforwideband,large–signaloutputanddriveramplifierstagesto1.0GHz. ?DesignedforClassALinearPowerAmplifiers ?Specified25Volt,900MHzCharacteristics: OutputPower—3.0Watts PowerGain—7.5dBMin,ClassAB ?

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MSN1030D

100V(D-S)N-ChannelEnhancementModePowerMOSFET

MORESEMIMORE Semiconductor Company Limited

摩矽半導(dǎo)體摩矽半導(dǎo)體有限公司

MSN1030M

100V(D-S)N-ChannelEnhancementModePowerMOSFET

MORESEMIMORE Semiconductor Company Limited

摩矽半導(dǎo)體摩矽半導(dǎo)體有限公司

MSP1030D

100V(D-S)P-ChannelEnhancementModePowerMOSFET

MORESEMIMORE Semiconductor Company Limited

摩矽半導(dǎo)體摩矽半導(dǎo)體有限公司

MSP1030K

-100V(D-S)P-ChannelEnhancementModePowerMOSFET

MORESEMIMORE Semiconductor Company Limited

摩矽半導(dǎo)體摩矽半導(dǎo)體有限公司

MUR1030

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR1030

Ultrafastrecoverytime,highvoltage

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

MUR1030

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR1030

HIGHEFFICIENCYRECTIFIERS

Feaures Glasspassivatedchipjunctions HighForwardSurgeCapability HighSpeedrecoverytimeforswitching modeapplication LeadfreeincompliancewithEURoHS 2011/65/EUdirective LowReverseCurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MUR1030

10AGLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES Lowcost Diffusdejunction Lowforwardvoltagedrop Highcurrentcapability Easilycleanedwithalcohol,Isopropanol andsimilarsolvents TheplasticmaterialcarriesU/Lrecognition94V-0

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

MUR1030CA

10.0AmpereHeatsinkDualCommonAnodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR1030CD

10.0AmpereHeatsinkDualDoublerPolarityUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR1030CL

10.0AmpereHeatsinkDualSeriesConnectionUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    MLN1030SL

  • 制造商:

    ASI

  • 制造商全稱:

    ASI

  • 功能描述:

    NPN SILICON RF POWER TRANSISTOR

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更多MLN1030SL供應(yīng)商 更新時(shí)間2025-1-11 16:20:00