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MLM-170UG

Visible LED Conventional Brightness-GaP, GaAsP and AlGaAs

MICRO-ELECTRONICS

Micro Electronics

MLM-170UR

VisibleLEDConventionalBrightness-GaP,GaAsPandAlGaAs

MICRO-ELECTRONICS

Micro Electronics

MLM-170Y

VisibleLEDConventionalBrightness-GaP,GaAsPandAlGaAs

MICRO-ELECTRONICS

Micro Electronics

MLM-170YG

VisibleLEDConventionalBrightness-GaP,GaAsPandAlGaAs

MICRO-ELECTRONICS

Micro Electronics

MMBF170

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MMBF170

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHi

DIODES

Diodes Incorporated

MMBF170

N-ChannelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MMBF170

0.5A,60VN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTCMMBF170isanN-channelenhancementMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),lowinputcapacitance,lowgatethresholdvoltageandhighswitchingspeed. FEATURES *RDS(ON)

UTCUnisonic Technologies

友順友順科技股份有限公司

MMBF170

N-ChannelEnhancementModeMOSFET

Features ●Surface-mountedpackage ●Advancedtrenchcelldesign ●Extremelylowthresholdvoltage ●ESDprotected(HBM>2KV) Quickreference ●BV≧60V ●Ptot≦0.83W ●ID≦0.5A ●RDS(ON)≦3Ω@VGS=10V ●RDS(ON)≦4Ω@VGS=4.5V

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

MMBF170L

PowerMOSFET

PowerMOSFET 500mA,60V,N?ChannelSOT?23 Features ?NVBFPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBF170Q

N-CHANNELENHANCEMENTMODEMOSFET

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHi

DIODES

Diodes Incorporated

MMF170A

200W170VTVStransientsuppressordiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

MMF170A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MMF170A

Lowprofilepackage

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨啟半導(dǎo)體上海晨啟半導(dǎo)體有限公司

MMF170A

5.0to190Volts200WattsSMDTRANSIENTVOLTAGESUPPRESSORS

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MMF170CA

200W170VTVStransientsuppressordiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

MMF170CA

Lowprofilepackage

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨啟半導(dǎo)體上海晨啟半導(dǎo)體有限公司

MMF170CA

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MMF170CA

5.0to190Volts200WattsSMDTRANSIENTVOLTAGESUPPRESSORS

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MMFTN170

N-ChannelEnhancementModeFieldEffectTransistor

Feature ?Voltagecontrolledsmallsignalswitch ?Highsaturationcurrentcapability

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

詳細(xì)參數(shù)

  • 型號:

    MLM-170UG

  • 制造商:

    MICRO-ELECTRONICS

  • 制造商全稱:

    Micro Electronics

  • 功能描述:

    Visible LED Conventional Brightness-GaP, GaAsP and AlGaAs

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80
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88900
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2315+
SMD
260012
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臺產(chǎn)
24+
805
68900
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MOT
24+
DIP-8
28
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MOTOROLA
專業(yè)鐵帽
CAN10
2000
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MOTOROLA/摩托羅拉
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25000
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Motorola
22+
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9000
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MOTOROLA(摩托羅拉)
20+
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1
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更多MLM-170UG供應(yīng)商 更新時間2024-12-23 10:08:00