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MJ11033

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

MJ11033

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A(Pulsed) ?

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJ11033

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High?CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain?hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc ?Curvesto100A

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11033

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJ11033

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES ?HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A ?CURVESTO100A(Pulsed) ?DIODEPROTECTIONTORATEDIC ?MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR ?JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11033

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features ?HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc ?Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJ11033

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage :V(BR)CEO=-120V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=-25A :hFE=400(Min.)@IC=-50A ?ComplementtoTypeMJ11032 APPLICATIONS ?Designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierappli

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJ11033

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11033

High-Current Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJ11033G

High??urrent Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

晶體管資料

  • 型號:

    MJ11033

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    120V

  • 最大電流允許值:

    50A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

  • 最大耗散功率:

    300W

  • 放大倍數(shù):

  • 圖片代號:

    E-44

  • vtest:

    120

  • htest:

    999900

  • atest:

    50

  • wtest:

    300

詳細參數(shù)

  • 型號:

    MJ11033

  • 功能描述:

    達林頓晶體管 50A 120V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
ON(安森美)
24+
標準封裝
7308
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
詢價
M
24+
TO 3
157342
明嘉萊只做原裝正品現(xiàn)貨
詢價
MOTOROLA/摩托羅拉
24+
TO
17
只做原廠渠道 可追溯貨源
詢價
ON(安森美)
23+
14820
公司只做原裝正品,假一賠十
詢價
AN
2016+
原廠封裝
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
詢價
ON
23+
TO-3
5500
現(xiàn)貨,全新原裝
詢價
ON
23+
TO-3
5000
原裝正品,假一罰十
詢價
MOT
24+
TO-3
10000
詢價
ONS
24+
原廠封裝
1500
原裝現(xiàn)貨假一罰十
詢價
MOT
23+
CAN
7750
全新原裝優(yōu)勢
詢價
更多MJ11033供應商 更新時間2025-4-12 9:38:00