KTD2151BEUO-GG-TR

Marking：MJYYZ；Package：WLCSP-15；Programmable Dual Output LCD Bias Power

Features ?Inputvoltagerange(2.7Vto5.5V) ?Dualoutputregulatorwithsingleinductor ?Highefficiencyabove85 ?ChargepumpwithPFMmodeatlightload ?Programmableoutputvoltages ?Positiveoutputvoltagerange ?+4.0Vto+6.3V(100mV/step) ?Negativeoutputvoltagerange ?

LM4041DIDCKR

Marking：MJU；Package：SC70；LM4041 Precision Micropower Shunt Voltage Reference

1Features ?1.225VFixedandadjustableoutputs (1.225Vto10V) ?Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–Agrade –Maximum0.2%,100ppm/°C–Bgrade –Maximum0.5%,100ppm/°C–Cgrade –Maximum1.0%,150ppm/°C–Dgrade ?Low

LM4041DIDCKRG4

Marking：MJU；Package：SC70；LM4041 Precision Micropower Shunt Voltage Reference

1Features ?1.225VFixedandadjustableoutputs (1.225Vto10V) ?Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–Agrade –Maximum0.2%,100ppm/°C–Bgrade –Maximum0.5%,100ppm/°C–Cgrade –Maximum1.0%,150ppm/°C–Dgrade ?Low

MJD127

Marking：MJD127；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain ElectricallySimilartoPopularTIP127 Built-inaDamperDiodeatE-C

MJD148

Marking：MJD148；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Electricallysimilartopopul

MJD148-Q

Marking：MJD148A；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse

MJD2873

Marking：MJD2873；Package：DPAK；50 V, 2 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD2873series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds Applications ?Powermanagement ?Loadswitch ?Line

MJD2873-Q

Marking：MJD2873A；Package：DPAK；50 V, 2 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD2873series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse

MJD3055

Marking：MJD3055XXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

MJD31C

Marking：MJD31C；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elect