零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNSiliconPowerTransistor NPNSiliconPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?HighGain?50Min@IC=2.0A ?LowSaturationVoltage?0.5V@IC=2.0A ?HighCurrentGain?BandwidthProduct?fT=3.0MHzMin@ | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
NPNSiliconPowerTransistor | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?DCCurrentGain-:hFE=85(Min)@IC=0.5A ?LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=2A ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designedforuseingeneral | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
NPNSiliconPowerTransistor | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
NPNSILICONPLASTICPOWERTRANSISTORS NPNSILICONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | CDIL | ||
45V,4ANPNhighpowerbipolartransistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Electricallysimilartopopul | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=45V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.5V(Max)@IC=2A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
45V,4ANPNhighpowerbipolartransistor Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
45V,4ANPNhighpowerbipolartransistor Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
N-CHANNELMOSLINEARRFPOWERFET | MACOM Tyco Electronics | MACOM | ||
N-CHANNELMOSLINEARRFPOWERFET TheRFMOSFETLineRFPowerField-EffectTransistorN-ChannelEnhancement-Mode Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorHighOrderIMD ?Specified50Volts,30MHzCharacteristics OutputPower=30Watts Pow | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RFPowerField-EffectTransistor TheRFMOSFETLineRFPowerField-EffectTransistorN-ChannelEnhancement-Mode Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorHighOrderIMD ?Specified50Volts,30MHzCharacteristics OutputPower=30Watts Power | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
LinearRFPowerFET30W,to175MHz,50V Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorhighorderIMD IMD(d3)(30WPEP):–35dB(Typ.) IMD(d11)(30WPEP):–60dB(Typ.) ?Specified50V,30MHzcharacteristics: Outputpower:30W Gain:18dB(Typ.) | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
N-ChannelEnhancementModeVHFPOWERMOSFET DESCRIPTION: TheASIMRF148AisDesignedforGeneralPurposeClassBPowerAmplifierApplicationsupto175MHz. FEATURES: ?PG=15dBTyp.at30W/175MHz ?ηD=50Typ.at30W/30MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
Designedforpoweramplifierapplicationsinindustrial Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorhighorderIMD IMD(d3)(SOWPEP):-35dB(Typ.) IMD(d11)(30WPEP):-60dB(Typ.) ?Specified50V,30MHzcharacteristics: Outputpower:SOW Gain:18dB(Typ.) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
LinearRFPowerFET30W,to175MHz,50V | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
GLASSPASSIVATEDSUPERFASTRECTIFIER | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒濟南晶恒電子有限責任公司 | JINGHENG | ||
PlatinumThinFilm(PTF)TemperatureElements | TECTE Connectivity Ltd 泰科電子泰科電子有限公司 | TEC | ||
Ultra-LowNoiseHighPSRRLDORegulatorAnalogCircuits | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
NTE5061AthruNTE5105AZenerDiode,1Watt5Tolerance Features: ?ZenerVoltage110Vto200V ?LowCost ?LowZenerImpedance ?ExcellentClamping ?EasilyCleanedwithFreon,Alcohol,Chlorothene,andSimilarSolvents | NTE NTE Electronics | NTE |
詳細參數
- 型號:
MJ-148REV
- 制造商:
Schurter Electronic Components
- 功能描述:
AUDIO SOCKET 3.5MM 2P PCB - Bulk
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
GPS / MITEL |
24+ |
DIP28 |
500000 |
行業(yè)低價,代理渠道 |
詢價 | ||
GPS |
DIP |
90000 |
集團化配單-有更多數量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
GPS |
QQ咨詢 |
DIP |
111 |
全新原裝 研究所指定供貨商 |
詢價 | ||
PS |
2315+ |
DIP |
3335 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 | ||
24+ |
N/A |
1450 |
詢價 | ||||
MOT/ON |
24+ |
TO-3 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
1738+ |
TO-3 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
ISC |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
N/A |
18+ |
TO-3 |
200 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
ON/MOT |
18+ |
TO-3 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 |
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