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MJD148

NPNSiliconPowerTransistor

NPNSiliconPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?HighGain?50Min@IC=2.0A ?LowSaturationVoltage?0.5V@IC=2.0A ?HighCurrentGain?BandwidthProduct?fT=3.0MHzMin@

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD148

NPNSiliconPowerTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD148

iscSiliconNPNPowerTransistor

DESCRIPTION ?DCCurrentGain-:hFE=85(Min)@IC=0.5A ?LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=2A ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designedforuseingeneral

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD148

NPNSiliconPowerTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD148

NPNSILICONPLASTICPOWERTRANSISTORS

NPNSILICONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications

CDIL

Continental Device India Limited

MJD148

45V,4ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Electricallysimilartopopul

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD148

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=45V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.5V(Max)@IC=2A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJD148-Q

45V,4ANPNhighpowerbipolartransistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MJD148-QJ

45V,4ANPNhighpowerbipolartransistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?ElectricallysimilartopopularMJD148series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?QualifiedaccordingtoAEC-Q101andrecommendedforuse

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

MRF148

N-CHANNELMOSLINEARRFPOWERFET

MACOM

Tyco Electronics

MRF148

N-CHANNELMOSLINEARRFPOWERFET

TheRFMOSFETLineRFPowerField-EffectTransistorN-ChannelEnhancement-Mode Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorHighOrderIMD ?Specified50Volts,30MHzCharacteristics OutputPower=30Watts Pow

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF148

RFPowerField-EffectTransistor

TheRFMOSFETLineRFPowerField-EffectTransistorN-ChannelEnhancement-Mode Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorHighOrderIMD ?Specified50Volts,30MHzCharacteristics OutputPower=30Watts Power

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MRF148A

LinearRFPowerFET30W,to175MHz,50V

Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorhighorderIMD IMD(d3)(30WPEP):–35dB(Typ.) IMD(d11)(30WPEP):–60dB(Typ.) ?Specified50V,30MHzcharacteristics: Outputpower:30W Gain:18dB(Typ.)

MA-COM

M/A-COM Technology Solutions, Inc.

MRF148A

N-ChannelEnhancementModeVHFPOWERMOSFET

DESCRIPTION: TheASIMRF148AisDesignedforGeneralPurposeClassBPowerAmplifierApplicationsupto175MHz. FEATURES: ?PG=15dBTyp.at30W/175MHz ?ηD=50Typ.at30W/30MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

MRF148A

Designedforpoweramplifierapplicationsinindustrial

Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto175MHz. ?SuperiorhighorderIMD IMD(d3)(SOWPEP):-35dB(Typ.) IMD(d11)(30WPEP):-60dB(Typ.) ?Specified50V,30MHzcharacteristics: Outputpower:SOW Gain:18dB(Typ.)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MRF148A

LinearRFPowerFET30W,to175MHz,50V

MA-COM

M/A-COM Technology Solutions, Inc.

MUR148

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟南晶恒電子有限責任公司

NB-PTCO-148

PlatinumThinFilm(PTF)TemperatureElements

TECTE Connectivity Ltd

泰科電子泰科電子有限公司

NCP148

Ultra-LowNoiseHighPSRRLDORegulatorAnalogCircuits

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTE148A

NTE5061AthruNTE5105AZenerDiode,1Watt5Tolerance

Features: ?ZenerVoltage110Vto200V ?LowCost ?LowZenerImpedance ?ExcellentClamping ?EasilyCleanedwithFreon,Alcohol,Chlorothene,andSimilarSolvents

NTE

NTE Electronics

詳細參數

  • 型號:

    MJ-148REV

  • 制造商:

    Schurter Electronic Components

  • 功能描述:

    AUDIO SOCKET 3.5MM 2P PCB - Bulk

供應商型號品牌批號封裝庫存備注價格
GPS / MITEL
24+
DIP28
500000
行業(yè)低價,代理渠道
詢價
GPS
DIP
90000
集團化配單-有更多數量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
GPS
QQ咨詢
DIP
111
全新原裝 研究所指定供貨商
詢價
PS
2315+
DIP
3335
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價
24+
N/A
1450
詢價
MOT/ON
24+
TO-3
2500
原裝現(xiàn)貨假一罰十
詢價
ON
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
N/A
18+
TO-3
200
進口原裝正品優(yōu)勢供應
詢價
ON/MOT
18+
TO-3
41200
原裝正品,現(xiàn)貨特價
詢價
更多MJ-148REV供應商 更新時間2025-1-15 8:20:00