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MIO-5350

Intel? Pentium N4200 Celeron N3350 & Atom??E3950/E3940/E3930, 3.5

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

MIO-5350N-S1A1E

Intel? Pentium N4200 Celeron N3350 & Atom??E3950/E3940/E3930, 3.5

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

MIO-5350N-S2A1E

Intel? Pentium N4200 Celeron N3350 & Atom??E3950/E3940/E3930, 3.5

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

MIO-5350N-S1A1E

包裝：散裝 類別：嵌入式計算機 單板計算機（SBC），模塊化計算機（COM） 描述：INTEL CELERON N3350 3.5\

Advantech Corp

Advantech Corp

Advantech Corp

MIO-5350N-S2A1E

包裝：散裝 類別：嵌入式計算機 單板計算機（SBC），模塊化計算機（COM） 描述：INTEL PENTIUM N4200 3.5\

Advantech Corp

Advantech Corp

Advantech Corp

PB5350

50VlowVCEsatPNPtransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

PNPtransistor

DESCRIPTION PNPlowVCEsattransistorinaSC-74plasticpackage. NPNcomplement:PBSS4350D. FEATURES ?Highcurrentcapabilities ?LowVCEsat. APPLICATIONS ?Heavydutybatterypoweredequipment(Automotive,TelecomandAudio/Video)suchasmotorandlampdrivers ?VCEsatcriticalapplica

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

50VlowVCEsatPNPtransistor

Generaldescription 150WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom2500MHzto2700MHz. Featuresandbenefits ■Excellentruggedness ■Highefficiency ■LowRthprovidingexcellentthermalstability ■Designedforbroadbandoperation(2500MHzto2700MHz) ■

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5350D

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgenera

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350D-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgene

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350PAS

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350PAS-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350S

Highpowerdissipation(830mW)

DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350SS

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS5350T

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

50V,3APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatge

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

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Advantech
22+
NA
6878
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 詢價
IXYS
22+
E11
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
23+
E11
9000
原裝正品，支持實單
 詢價
IXYS
23+
600A6500
450
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
IXYS
23+
IGBTMODULESGL600AE11
1690
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 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
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IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
IXYS
21+
E11
1000
主打產(chǎn)品價格優(yōu)惠.全新原裝正品
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IXYS
1931+
N/A
18
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IXYS
1809+
E11
7
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更多MIO-5350供應(yīng)商 更新時間2025-1-3 10:08:00

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