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MID122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.

DCCOM

Dc Components

MJD122

ComplementaryDarlingtonPowerTransistors

Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD122

ComplementaryDarlingtonPowerTransistors

Features ?D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications ?ElectricallySimilartoPopularTIP122 ?ComplementtoMJD127

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“–1”Suffix) ?LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) ?Sur

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD122

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJD122

ComplementaryDarlingtonPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD122

LowvoltagepowerDarlingtontransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJD122

SiliconNPNepitaxialplanerTransistors

Features ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MJD122

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.

DCCOM

Dc Components

MJD122

NPNPLASTICENCAPSULATETRANSISTORS

Features: *HighDCcurrentgain *ElectricallysimilartopopularTIP122 *Built-inadamperdiodeatE-C

WEITRON

Weitron Technology

詳細參數(shù)

  • 型號:

    MID122

  • 制造商:

    DCCOM

  • 制造商全稱:

    Dc Components

  • 功能描述:

    TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
UNI
13+
19728
原裝分銷
詢價
UNI
24+
DIP-2
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
UNI
2315+
4860
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價
UNI
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IXYS
22+
Y4M5
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
23+
Y4M5
9000
原裝正品,支持實單
詢價
IXYS
23+
MODIGBTRBSOA1200V160AY4-
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS/艾賽斯
1926+
MODULE
585
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
詢價
更多MID122供應(yīng)商 更新時間2025-3-18 9:00:00