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MSAER12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFR12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SIHA12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA12N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHA12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Computing

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB12N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHB12N50C

PowerMOSFET

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB12N50C

PowerMOSFETs

FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB12N50E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Computing

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多MHM12N50H-XV供應(yīng)商 更新時(shí)間2025-1-25 16:00:00