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MF-RHT700

High Temperature PTC Resettable Fuses

BournsBourns Electronic Solutions

伯恩斯

MF-RHT700-0-14

包裝：帶盒（TB） 封裝/外殼：徑向，圓片式 類別：電路保護 PTC 可復位保險絲 描述：PTC 7.0A 16V RADIAL LEADED HI-TE

Bourns Inc.

Bourns Inc.

Bourns Inc.

MF-RHT700-2

包裝：卷帶（TR）剪切帶（CT） 封裝/外殼：徑向，圓片式 類別：電路保護 PTC 可復位保險絲 描述：PTC RESET FUSE 16V 7A RADIAL

Bourns Inc.

Bourns Inc.

Bourns Inc.

MF-RHT700-2-14

包裝：卷帶（TR） 封裝/外殼：徑向，圓片式 類別：電路保護 PTC 可復位保險絲 描述：PTC 7.0A 16V RADIAL LEADED HI-TE

Bourns Inc.

Bourns Inc.

Bourns Inc.

MF-USML700

LowOhmicPTCResettableFuses

BournsBourns Electronic Solutions

伯恩斯

MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE700

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors ?HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC ?ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE700

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung semiconductor

三星三星半導體

MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage— :V(BR)CEO=-60V ?DCCurrentGain— :hFE=750(Min)@IC=-1.5A ?ComplementtoTypeMJE800 APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE700

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導體

MJE700

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJE700G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE700T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE700T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

MJE700T

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage—:V(BR)CEO=-60V ?DCCurrentGain—:hFE=750(Min)@IC=-1.5A ?ComplementtoTypeMJE800T APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE700T

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
BOURNS
2112+
Radial
115000
1500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Bourns
22+
NA
5889
加我QQ或微信咨詢更多詳細信息,
 詢價
BOURNS
21+
徑向引線
4000
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導者
 詢價
BOURNS
23+
插件
7350
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
BOURNS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
BOURNS
DIP
92000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
BOURNS
20+
電路保護
6985
就找我吧!--邀您體驗愉快問購元件!
 詢價
BOURNS
22+
NA
30000
100%全新原裝 假一賠十
 詢價
Bourns
新
5
全新原裝 貨期兩周
 詢價
Bourns
2022+
1
全新原裝 貨期兩周
 詢價
更多MF-RHT700供應(yīng)商 更新時間2025-1-3 15:00:00

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