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MDA2501

400 Ampere Surge Capability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MDA2501

RECTIFIER ASSEMBLY

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MEM2501SG

MicrOneNajing Micro One Electronics Inc.

南京微盟南京微盟電子有限公司

PDF上傳者:深圳市溢航科技有限公司

MH2501SC

EasyMultiInterleaveControllerformulti-phaseinterleavedPFC

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新電元工業(yè)株式會(huì)社

MJ2501

10AmpereDarlingtonPowerTransistorsComplementarySilicon

[multicomp] Features: ?Medium-powercomplementarySiliconTransistorsforuseasoutputdevicesin complementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain hFE=1000(Typical)atIC=5.0A. ?MonolithicconstructionwithbuiltBase-EmitterShuntResistors.

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

MJ2501

DARLINGTONPOWERTRANSISTORCOMPLEMENTARYSILICON

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain— hFE=4000(Typ)@IC=5.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ2501

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJ2501isaSiliconEpitaxial-BasePNPpowertransistorsinmonolithicDarlingtonconfiguration,mountedinJedecTO-3metacase.Itisintentedforuseinpowerlinearandswitchingapplications. ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVI

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJ2501

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJ2501

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3package ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeMJ3000/3001 APPLICATIONS ·Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

SAVANTIC

Savantic, Inc.

MJ2501

COMPLEMENTARYPOWERDARLINGTONS

COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30

COMSET

Comset Semiconductor

MJ2501

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

MJ2501

iscSiliconPNPDarlingtionPowerTransistor

DESCRIPTION ?Built-inBase-EmitterShuntResistors ?HighDCcurrentgain hFE=1000(Min)@IC=-5A ?Collector-EmitterBreakdownVoltage V(BR)CEO=-80V(Min) ?ComplementtotypeMJ3001 APPLICATIONS ?Designedforuseasoutputdevicesincomplementary generalpurpose

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJ2501

Medium-PowerComplementarySiliconTransistors

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJ2501

Siliconcomplementarytrasistorspowerdarlington

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

MJ2501

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJ2501

COMPLEMENTARYPOWERDARLINGTONS

COMSET

Comset Semiconductor

MKBPC2501

SILICONBRIDGERECTIFIERS

HY

HY ELECTRONIC CORP.

MKBPC2501

SILICONBRIDGERECTIFIERS

Good-Ark

GOOD-ARK Electronics

MKBPC2501

SiliconBridgeRectifiers

HY

HY ELECTRONIC CORP.

MKBPC2501W

SILICONBRIDGERECTIFIERS

HY

HY ELECTRONIC CORP.

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Eaton
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更多MDA2501供應(yīng)商 更新時(shí)間2025-1-16 14:00:00