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MC74VHCT08AMG

Quad 2??nput AND Gate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MC74VHCT08AMG

包裝:管件 封裝/外殼:14-SOIC(0.209",5.30mm 寬) 類別:集成電路(IC) 門和反相器 描述:IC GATE AND 4CH 2-INP SOEIAJ-14

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

74VHCT08

Quad2-inputANDgate

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

74VHCT08A

Quad2-InputANDGate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

74VHCT08A

QUAD2-INPUTANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

74VHCT08A

QUAD2-INPUTANDGATE

DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2μA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

74VHCT08A

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AFT

CMOSDigitalIntegratedCircuitsSiliconMonolithic

FunctionalDescription ?Quad2-InputANDGate General The74VHCT08AFTisanadvancedhighspeedCMOS2-INPUTANDGATEfabricatedwithsilicongateC2MOS technology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOS lowpowerdissipa

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

74VHCT08AM

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AM

QUAD2-INPUTANDGATE

DESCRIPTION The74VHCT08Aisanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=4.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2μA(MAX.)atTA=25°C ■COMPATIBLEWITHTTLOUTPU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

74VHCT08AM

Quad2-InputANDGate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

74VHCT08AMTC

Quad2-InputANDGate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

74VHCT08AMTC

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMTCX

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMTCX_NL

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMTR

QUAD2-INPUTANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

74VHCT08AMX

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AMX_NL

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08AN

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

74VHCT08ANX

Quad2-InputANDGate

GeneralDescription TheVHCT08AisanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highspeed:tPD=5.0ns(typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MC74VHCT08AMG

  • 制造商:

    onsemi

  • 類別:

    集成電路(IC) > 門和反相器

  • 系列:

    74VHCT

  • 包裝:

    管件

  • 邏輯類型:

    與門

  • 輸入數(shù):

    2

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 電流 - 輸出高、低:

    8mA,8mA

  • 邏輯電平 - 低:

    0.8V

  • 邏輯電平 - 高:

    2V

  • 不同 V、最大 CL 時最大傳播延遲:

    7.9ns @ 5V,50pF

  • 工作溫度:

    -40°C ~ 125°C

  • 安裝類型:

    表面貼裝型

  • 供應(yīng)商器件封裝:

    SOEIAJ-14

  • 封裝/外殼:

    14-SOIC(0.209",5.30mm 寬)

  • 描述:

    IC GATE AND 4CH 2-INP SOEIAJ-14

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
20+
SOP-14
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
ON Semiconductor
22+
14SOIC
9000
原廠渠道,現(xiàn)貨配單
詢價
ON Semiconductor
21+
14SOIC
13880
公司只售原裝,支持實單
詢價
ON Semiconductor
21+
14SOIC
610880
本公司只售原裝 支持實單
詢價
ON Semiconductor
23+
14SOIC
9000
原裝正品,支持實單
詢價
onsemi
24+
SOEIAJ-14
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
ON
24+
5000
自己現(xiàn)貨
詢價
NXP/恩智浦
2324+
NA
78920
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口
詢價
ON Semiconductor(安森美)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
ON
23+
SOP
7566
原廠原裝
詢價
更多MC74VHCT08AMG供應(yīng)商 更新時間2021-9-14 10:50:00