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MBRA1100T3

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Siliconepitaxialplanertype Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowleakagecurrent.

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

MBRA1100T3

CHIPSCHOTTKYBARRIERDIODES

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowleakagecurrent.

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯電子深圳市泰迪斯電子科技有限公司

MBRAF1100T3G

SchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF1100T3G

SchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS1100T3

1.0ASurfaceMountSchottkyPowerRectifier

Features ●Pb?FreePackagesareAvailable ●SmallCompactSurfaceMountablePackagewithJ-BendLeads ●RectangularPackageforAutomatedHandling ●HighlyStableOxidePassivatedJunction ●HighBlockingVoltage?100Volts ●175°COperatingJunctionTemperature ●GuardringforStressProt

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MBRS1100T3

1AmpSchottkyRectifier

●UderwirtersLaboratoryFlammabilityClass94V-0 ●SchottkyBarrierRectifier ●GuardRingProtection ●175°CJunctionTemperature ●Surfacemountpackage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MBRS1100T3

SchottkyPowerRectifier(SurfaceMountPowerPackage)

SchottkyBarrierRectifier SurfaceMountPowerPackage SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MBRS1100T3

SchottkyPowerRectifier

SchottkyPowerRectifier SurfaceMountPowerPackage SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuited

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS1100T3

SchottkyPowerRectifierSurfaceMountPowerPackage

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS1100T3G

SchottkyPowerRectifierSurfaceMountPowerPackage

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
3000
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MOT
00+
DO-214
2500
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22+
DO-214
2000
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢
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MOT
00+
DO-214
6000
絕對原裝自己現(xiàn)貨
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ON
09+
DO-214AA
80000
絕對全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn)
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DISCRETE
2500
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35000
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ON
11+
18584
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
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2020+
DO-214A
18135
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23+
SMB
12335
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17+
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6200
100%原裝正品現(xiàn)貨
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更多MBRS1100T3(BIC.ZP)供應(yīng)商 更新時(shí)間2025-2-19 10:20:00

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