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MBRS330T3

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330T3

SCHOTTKYBARRIERRECTIFIERS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330T3G

SurfaceMountSchottkyPowerRectifier

ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolari

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330T3G

SurfaceMountSchottkyPowerRectifier

ThesedevicesemploytheSchottkyBarrierprincipleinalargearea metal-to-siliconpowerdiode.State-of-the-artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS330T3G

SurfaceMountSchottkyPowerRectifier

ThesedevicesemploytheSchottkyBarrierprincipleinalargearea metal-to-siliconpowerdiode.State-of-the-artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS330T3G

SurfaceMountSchottkyPowerRectifier

ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolari

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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