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MBR3100_V01中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
MBR3100_V01規(guī)格書詳情
This device employs the Schottky Barrier principle in a large area
metal?to?silicon power diode. State?of?the?art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low?voltage,
high?frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
? Low Reverse Current
? Low Stored Charge, Majority Carrier Conduction
? Low Power Loss/High Efficiency
? Highly Stable Oxide Passivated Junction
? Guard?ring for Stress Protection
? Low Forward Voltage
? 175?C Operating Junction Temperature
? High Surge Capacity
? Pb?Free Packages are Available*
Mechanical Characteristics:
? Case: Epoxy, Molded
? Weight: 1.1 Gram (Approximately)
? Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
? Lead Temperature for Soldering Purposes:
260?C Max. for 10 Seconds
? Polarity: Cathode indicated by Polarity Band
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
DO-201AD |
10000 |
十年沉淀唯有原裝 |
詢價(jià) | ||
DIODES |
NA |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
onsemi(安森美) |
23+ |
DO-201AD |
10000 |
只做原裝 假一賠萬(wàn) |
詢價(jià) | ||
ON/安森美 |
21+ |
DO-201AD |
8080 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
ON/安森美 |
23+ |
DO-201AD |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價(jià) | ||
ON |
22+ |
NA |
1206 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
ON/安森美 |
21+ |
DO-201AD |
8080 |
公司只做原裝,誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
DIODES/美臺(tái) |
04+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
ON |
23+ |
DIA |
3200 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售! |
詢價(jià) |
