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MBR10H100CTG

SWITCHMODE Power Rectifier 100 V, 10 A

FeaturesandBenefits ?LowForwardVoltage:0.61V@125°C ?LowPowerLoss/HighEfficiency ?HighSurgeCapacity ?175°COperatingJunctionTemperature ?10ATotal(5.0APerDiodeLeg) ?Guard?RingforStressProtection ?Pb?FreePackageisAvailable Applications ?PowerSupply?Outp

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBR10H100CTG

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOTTKY 100V TO220

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRB10H100

High-VoltageSchottkyRectifier

HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequenc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB10H100

HighVoltageSchottkyRectifiers

HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequenc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB10H100

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0

SchottkyBarrierRectifiers Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Guardringforovervoltageprotection ?Foruseinlowvoltage,highfr

KERSEMI

Kersemi Electronic Co., Ltd.

MBRB10H100

HighVoltageSchottkyRectifier

FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB10H100CT

DualHigh-VoltageSchottkyRectifiers

DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Guardringforovervoltageprotection ?Lowerpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?H

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB10H100CT

DualCommon-CathodeHigh-VoltageSchottkyRectifier

DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Guardringforovervoltageprotection ?Lowerpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?H

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRB10H100CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0

SchottkyBarrierRectifiers Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Dualrectifierconstruction,positivecentertap ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Guardringforovervo

KERSEMI

Kersemi Electronic Co., Ltd.

MBRB10H100CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0

SchottkyBarrierRectifiers Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Dualrectifierconstruction,positivecentertap ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Guardringforovervo

KERSEMI

Kersemi Electronic Co., Ltd.

MBRB10H100CT

DualCommonCathodeHighVoltageSchottkyRectifier

FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF10H100

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0

SchottkyBarrierRectifiers Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Guardringforovervoltageprotection ?Foruseinlowvoltage,highfr

KERSEMI

Kersemi Electronic Co., Ltd.

MBRF10H100

HighVoltageSchottkyRectifiers

HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequenc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF10H100

High-VoltageSchottkyRectifier

HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequenc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF10H100

HighVoltageSchottkyRectifier

FEATURES ?Powerpack ?Guardringforovervoltageprotection ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Highfrequencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF10H100CT

DualHigh-VoltageSchottkyRectifiers

DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Guardringforovervoltageprotection ?Lowerpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?H

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBRF10H100CT

Isolated10.0AMPS.SchottkyBarrierRectifiers

10.0AMPSIsolatedSchottkyBarrierRectifiers Features Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Guard-ringforovervoltageprotection Hightemperaturesolderingguaranteed:260℃/10seconds/.25,(6.35mm)fromcase Foruseinlowvoltage,

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

MBRF10H100CT

Isolated10.0AMP.SchottkyBarrierRectifiers

Isolated10.0AMP.SchottkyBarrierRectifiers Features PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Highsurgecapa

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBRF10H100CT

PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0

SchottkyBarrierRectifiers Features ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Dualrectifierconstruction,positivecentertap ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency ?Guardringforovervo

KERSEMI

Kersemi Electronic Co., Ltd.

MBRF10H100CT

DualCommon-CathodeHigh-VoltageSchottkyRectifier

DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES ?Guardringforovervoltageprotection ?Lowerpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?H

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號:

    MBR10H100CTG

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 陣列

  • 系列:

    SWITCHMODE?

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 二極管配置:

    1 對共陰極

  • 二極管類型:

    肖特基

  • 電流 - 平均整流 (Io)(每二極管):

    5A

  • 速度:

    快速恢復(fù) =< 500ns,> 200mA(Io)

  • 工作溫度 - 結(jié):

    175°C(最大)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO220

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-220
113400
詢價
ON
24+
TO-2203LEADSTANDA
8866
詢價
ON
2015+
TO-2203
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價
ON
23+
TO220AB
5000
原裝正品,假一罰十
詢價
ON
23+
TO-220AB
6893
詢價
ON
2020+
TO-220AB
9800
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ONSEMI
2018+
SMD
20000
一級代理原裝現(xiàn)貨假一罰十
詢價
ON
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
ON
20+
原裝
26000
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ON
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
更多MBR10H100CTG供應(yīng)商 更新時間2024-11-2 15:59:00