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MBM29LV160B-90PFTR

FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導體

EN29LV160B-90B

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90T

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

MBM29LV160B-90

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導體

MBM29LV160B-90

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PBT

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導體

MBM29LV160B-90PBT

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PCV

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導體

MBM29LV160B-90PCV

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PFTN

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導體

MBM29LV160B-90PFTN

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PFTY

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PN

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

詳細參數(shù)

  • 型號:

    MBM29LV160B-90PFTR

  • 制造商:

    SPANSION

  • 制造商全稱:

    SPANSION

  • 功能描述:

    FLASH MEMORY CMOS 16M(2M x 8/1M x 16) BIT

供應商型號品牌批號封裝庫存備注價格
FUJ
24+
TSSOP48
328
詢價
FUJ
23+
TSSOP/48
7000
絕對全新原裝!100%保質量特價!請放心訂購!
詢價
FUJITSU
2023+
TSOP48
3550
全新原廠原裝產品、公司現(xiàn)貨銷售
詢價
FUJITSU
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FUJITSU
1926+
TSOP
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
FUJITSU
23+
TSOP48
4000
正品原裝貨價格低qq:2987726803
詢價
MALAYSIA
22+
4897
絕對原裝!現(xiàn)貨熱賣!
詢價
FUJITSU/富士通
23+
TSSOP-48
9899
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
FUJITSU
09+
TSSOP
5500
原裝無鉛,優(yōu)勢熱賣
詢價
FUJ
2020+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
更多MBM29LV160B-90PFTR供應商 更新時間2024-11-17 15:30:00