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MJE700

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE700

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage— :V(BR)CEO=-60V ?DCCurrentGain— :hFE=750(Min)@IC=-1.5A ?ComplementtoTypeMJE800 APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE700

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE700

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE700G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE700G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE700T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE700T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE700T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE700T

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterBreakdownVoltage—:V(BR)CEO=-60V ?DCCurrentGain—:hFE=750(Min)@IC=-1.5A ?ComplementtoTypeMJE800T APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MAX700CPA+

  • 制造商：

    Analog Devices Inc./Maxim Integrated

  • 類別：

    集成電路（IC） > 監(jiān)控器

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 類型：

    簡單復(fù)位/加電復(fù)位

  • 電壓 - 閾值：

    可調(diào)節(jié)/可選擇

  • 輸出：

    推挽式，推挽式

  • 復(fù)位：

    高有效/低有效

  • 復(fù)位超時：

    最小為 200ms

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    8-DIP（0.300"，7.62mm）

  • 供應(yīng)商器件封裝：

    8-PDIP

  • 描述：

    IC SUPERVISOR 1 CHANNEL 8DIP

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Maxim
23+
8-DIP
30655
詢價(jià)
MAXIM
13+
PDIP
3738
原裝分銷
 詢價(jià)
MAXIM
23+
8-Dip
7750
全新原裝優(yōu)勢
 詢價(jià)
Maxim
1701+
?
11520
只做原裝進(jìn)口,假一罰十
 詢價(jià)
MAXIM
23+
PDIP8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
MaximIntegrated
24+
8-PDIP
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
Maxim
23+
8-DIP
65600
詢價(jià)
MAX
20+
8-Dip
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
MAXIMINTEGRATED
24+
NA
135
原裝現(xiàn)貨,專業(yè)配單專家
 詢價(jià)
Maxim Integrated
24+
8-PDIP
65200
一級代理/放心采購
 詢價(jià)
更多MAX700CPA+供應(yīng)商 更新時間2025-4-11 16:58:00

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