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MF359

780nm-55MHzHighPerformanceLED

Description Thelowthermaldroopofthisdeviceallowsbasebandvideotransmissionwithminimumdistortion.Thedouble-lensopticalsystemprovidesforoptimumcouplingofpowerintothefiber.ItmatcheswiththeMF446PINPhotodiode. Features ?780nmSurface-EmittingLED ?55MHzBandwidth

ZARLINK

Zarlink Semiconductor

NTE359

SiliconNPNTransistorRF&MicrowaveTransistor

Description: RFPowerTransistor20W?175MHz Features: Specified28Volt,175MHzCharacteristics OutputPower=20Watts MinimumGain=8.2dB Efficiency=60 Characterizedfrom125to175MHz IncludesSeriesEquivalentImpedances

NTE

NTE Electronics

NTS359

350Watts

Astec

Astec America, Inc

NTS359

Activepowerfactorcorrection

EMERSON-NETWORKPOWEREmerson Network Energy Co., Ltd

艾默生網(wǎng)絡(luò)能源艾默生網(wǎng)絡(luò)能源有限公司

NTS359

Singlewirecurrentsharing

ARTESYN

Artesyn Embedded Technologies

NTS359

Activepowerfactorcorrection

ARTESYN

Artesyn Embedded Technologies

PX359

AllstainlesssteeltransducermultimediacompatibilityHigh-PerformanceSilicontechnology

ETCList of Unclassifed Manufacturers

未分類制造商

PZT359

HighCurrentTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

RPR-359

Reflectivephotosensor(photoreflector)

TheRPR-359Fisareflectivephotosensor.TheemitterisaGaAsinfraredlightemittingdiodeandthedetectorisahigh-sensitivity,siliconplanarphototransistor.Aplasticlensisusedforhighsensitivity.Inaddition,sinceitismoldedinplasticwithavisiblelightfilter,thereisalmost

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RPR-359F

Reflectivephotosensor(photoreflector)

TheRPR-359Fisareflectivephotosensor.TheemitterisaGaAsinfraredlightemittingdiodeandthedetectorisahigh-sensitivity,siliconplanarphototransistor.Aplasticlensisusedforhighsensitivity.Inaddition,sinceitismoldedinplasticwithavisiblelightfilter,thereisalmost

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RPR-359F

Reflectivephotosensor(photoreflector)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

SK359AN

N-ChannelEnhancementModeMOSFET

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

SMZ359B

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC discrete Semiconductors

SZ359B

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC discrete Semiconductors

TG-359

HIGHENERGYSPARKGAPDEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

Clare

Clare, Inc.

TLG359

TOSHIBALEDDISPLAY

TOSHIBALEDDISPLAY

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TLR359

TOSHIBALEDDISPLAY

TOSHIBALEDDISPLAY

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TLS359

TOSHIBALEDDISPLAY

TOSHIBALEDDISPLAY

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

USS359

8GUNSOUNDBUILTINTRANSISTOR

DESCRIPTION TheUTCUSS359isanewtypeCMOSsoundgeneratordesignedforusinginrhythmbox,toys,etc.Itisdesignedwithsoundcompositesystembyminimumapplicationcircuitandelectrifyisworking.It’seasyforyoutodesignyourconsumerproducts. FEATURES *2V~3.5Vpowersupply *B

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細參數(shù)

  • 型號：

    MAX359MLP

  • 功能描述：

    多路器開關(guān) IC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 通道數(shù)量：

    1

  • 開關(guān)數(shù)量：

    4

  • 開啟電阻（最大值）：

    7 Ohms

  • 傳播延遲時間：

    0.25 ns

  • 工作電源電壓：

    2.3 V to 3.6 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    UQFN-16

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24+
10000
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MAXIM/美信
23+
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13000
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19198
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23+
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3000
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22+
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更多MAX359MLP供應(yīng)商 更新時間2024-12-27 13:30:00

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