首頁 >MA8100/M/-X>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
VerticalDriverLSIforVideoCameraCCDAreaImageSensor Overview TheMN3111HisaverticaldriverLSIforatwo-dimensionalinterlineCCDimagesensor.Itfeaturesabuilt-inpowersupplycircuitthat,inconjunctionwithsuchexternalcomponentsasfourboostercapacitors,sixvoltagestabilizationcapacitors,eightSchottkybarrierdiodes,andtwoZ | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Siliconplanartype Siliconplanartype Forstabilizationofpowersupply ■Features ?Extremelylownoisevoltagecausedfromthediode(2.4Vto39V,1/3to1/10ofourconventionalMAZ3000series) ?Extremelygoodrisingperformance(inthelow-currentrange) ?Easy-to-selecttheoptimumdiodebecause | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
MAZ8xxxGSeries | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
MAZ8xxxGSeries | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
MAZ8xxxGSeries | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Siliconplanartype Siliconplanartype Forstabilizationofpowersupply ■Features ?Extremelylownoisevoltagecausedfromthediode(2.4Vto39V,1/3to1/10ofourconventionalMAZ3000series) ?Extremelygoodrisingperformance(inthelow-currentrange) ?Easy-to-selecttheoptimumdiodebecause | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Siliconplanartype Siliconplanartype Forstabilizationofpowersupply ■Features ?Extremelylownoisevoltagecausedfromthediode(2.4Vto39V,1/3to1/10ofourconventionalMAZ3000series) ?Extremelygoodrisingperformance(inthelow-currentrange) ?Easy-to-selecttheoptimumdiodebecause | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Siliconplanartype Siliconplanartype Forstabilizationofpowersupply ■Features ?Extremelylownoisevoltagecausedfromthediode(2.4Vto39V,1/3to1/10ofourconventionalMAZ3000series) ?Extremelygoodrisingperformance(inthelow-currentrange) ?Easy-to-selecttheoptimumdiodebecause | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
8.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection | DIODESDiodes Incorporated 美臺半導(dǎo)體 | DIODES | ||
WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER |
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