MA5114中文資料Dynex數據手冊PDF規(guī)格書

The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3μm technology.

The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state.

FEATURES

■ 3μm CMOS-SOS Technology

■ Latch-up Free

■ Fast Access Time 90ns Typical

■ Total Dose 106 Rad(Si)

■ Transient Upset >1010 Rad(Si)/sec

■ SEU <10-10 Errors/bitday

■ Single 5V Supply

■ Three State Output

■ Low Standby Current 50μA Typical

■ -55°C to +125°C Operation

■ All Inputs and Outputs Fully TTL or CMOS Compatible

■ Fully Static Operation

■ Data Retention at 2V Supply