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M95512-D-RMN3GSLASHAB中文資料意法半導體數據手冊PDF規(guī)格書
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M95512-D-RMN3GSLASHAB規(guī)格書詳情
Description
The M95512-W, M95512-R and M95512-DR are electrically erasable programmable memory (EEPROM) devices accessed by a high-speed SPI-compatible bus. In the rest of the document these devices are referred to as M95512, unless otherwise specified. The M95512-DR also offers an additional page, named the Identification Page (128 bytes) which can be written and (later) permanently locked in Read-only mode. This Identification Page offers flexibility in the application board production line, as it can be used to store unique identification parameters and/or parameters specific to the production line.
Features
■ Compatible with the Serial Peripheral Interface (SPI) bus
■ Memory array
– 512 Kb (64 Kbytes) of EEPROM
– Page size: 128 bytes
■ Additional Write lockable Page (Identification page)
■ Write
– Byte Write within 5 ms
– Page Write within 5 ms
■ Write Protect: quarter, half or whole memory array
■ High-speed clock frequency (20 MHz)
■ Single supply voltage: 1.8 V to 5.5 V
■ More than 1 Million Write cycles
■ More than 40-year data retention
■ Enhanced ESD Protection
■ Packages
– ECOPACK2? (RoHS compliant and Halogen-free)
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA |
14280 |
強勢渠道訂貨 7-10天 |
詢價 | ||
ST/意法半導體 |
SO-8 |
6000 |
詢價 | ||||
ST |
2016+ |
SOP8 |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
STM |
19+ |
SOP8 |
2330 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ST(意法) |
23+ |
NA |
20094 |
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
ST/意法半導體 |
21+ |
SO-8 |
8860 |
原裝現貨,實單價優(yōu) |
詢價 | ||
ST/意法 |
21+ |
SO-8 |
35000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
ST |
22+23+ |
SOP8 |
42432 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
ST |
22+ |
8SO |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
ST/意法半導體 |
21+ |
SO-8 |
8860 |
只做原裝,質量保證 |
詢價 |