M700000003中文資料飛索數據手冊PDF規(guī)格書

GENERAL DESCRIPTION (PDL129)

The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations.

The device offers fast page access time of 25 and 30 ns, with corresponding random access times of 65 and 85 ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#f1, CE#f2), write enable (WE#) and output enable (OE#) controls. Dual Chip Enables allow access to two 64 Mbit partitions of the 128 Mbit memory space.

DISTINCTIVE CHARACTERISTICS

MCP Features

■ Consists of Am29PDL127H/Am29PDL129H, 32 Mb pSRAM and two Am29LV640M.

■ Power supply voltage of 2.7 to 3.3 volt

■ High performance (XIP)

— Access time as fast as 65 ns initial / 25 ns page

■ High performance (Data Storage)

— Access time as fast as 110 ns initial / 30 ns page

■ Package

— 93-Ball FBGA

■ Operating Temperature

— –40°C to +85°C

Flash Memory Features (XIP)

AM29PDL127H/AM29PDL129H ARCHITECTURAL ADVANTAGES

■ 128 Mbit Page Mode device

— Page size of 8 words: Fast page read access from random locations within the page

■ Dual Chip Enable inputs (PDL129 only)

— Two CE# inputs control selection of each half of the memory space

■ Single power supply operation

— Full Voltage range: 2.7 to 3.3 volt read, erase, and program operations for battery-powered applications

■ Simultaneous Read/Write Operation

— Data can be continuously read from one bank while executing erase/program functions in another bank

— Zero latency switching from write to read operations

■ FlexBank Architecture

— 4 separate banks, with up to two simultaneous operations per device

PDL127:

— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank B: 48 Mbit (32 Kw x 96)

— Bank C: 48 Mbit (32 Kw x 96)

— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

PDL129:

— Bank 1A: 48 Mbit (32 Kw x 96)

— Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank 2B: 48 Mbit (32 Kw x 96)

■ SecSiTM (Secured Silicon) Sector region

— Up to 128 words accessible through a command sequence

— Up to 64 factory-locked words

— Up to 64 customer-lockable words

■ Both top and bottom boot blocks in one device

■ Manufactured on 0.13 μm process technology

■ 20-year data retention at 125°C

■ Minimum 1 million erase cycle guarantee per sector

PERFORMANCE CHARACTERISTICS

■ High Performance

— Page access times as fast as 25 ns

— Random access times as fast as 65 ns

■ Power consumption (typical values at 10 MHz)

— 45 mA active read current

— 25 mA program/erase current

— 1 μA typical standby mode current

SOFTWARE FEATURES

■ Software command-set compatible with JEDEC 42.4 standard

— Backward compatible with Am29F and Am29LV families

■ CFI (Common Flash Interface) complaint

— Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or program operations in other sectors of same bank

■ Unlock Bypass Program command

— Reduces overall programming time when issuing multiple program command sequences

HARDWARE FEATURES

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

■ WP#/ACC (Write Protect/Acceleration) input

— At VIL, hardware level protection for the first and last two 4K word sectors.

— At VIH, allows removal of sector protection

— At VHH, provides accelerated programming in a factory setting

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