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M5M27C202VP-15

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29F25611VP

MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29F25611isaCMOSFlashMemorywithANDtypemulti-levelmemorycells. Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply. Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunito

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800FP

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800FP-10

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800FP-12

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800RV-10

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800RV-12

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800VP-10

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FB800VP-12

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M29FT800FP-10

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

詳細(xì)參數(shù)

  • 型號：

    M5M

  • 制造商：

    MITSUBISHI

  • 制造商全稱：

    Mitsubishi Electric Semiconductor

  • 功能描述：

    16,777,216-BIT(1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

供應(yīng)商型號品牌批號封裝庫存備注價格
MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
HIT
06+
QFP100
3600
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價
HIT
17+
QFP100
9988
只做原裝進(jìn)口,自己庫存
 詢價
HIT
23+
QFP100
20000
全新原裝假一賠十
 詢價
MIT
24+
SOP-16P
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
MIT
23+
SOP/16
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
MITSUBISHI
24+
SOP
3000
公司存貨
 詢價
MIT
24+
SOP
3200
十年品牌!原裝現(xiàn)貨!!!
 詢價
MIT
24+
SOP
5632
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
MIT
24+
SOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
更多M5M供應(yīng)商 更新時間2025-4-19 9:02:00

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