M59DR008中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

廠(chǎng)商型號(hào) |
M59DR008 |
功能描述 | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
文件大小 |
267.87 Kbytes |
頁(yè)面數(shù)量 |
37 頁(yè) |
生產(chǎn)廠(chǎng)商 | STMicroelectronics |
企業(yè)簡(jiǎn)稱(chēng) |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱(chēng) | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
原廠(chǎng)標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-3-27 17:30:00 |
人工找貨 | M59DR008價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
相關(guān)芯片規(guī)格書(shū)
更多M59DR008規(guī)格書(shū)詳情
DESCRIPTION
The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device supports asynchronous page mode from all the blocks of the memory array.
■ SUPPLY VOLTAGE
– VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read
– VPP = 12V: optional Supply Voltage for fast Program and Erase
■ ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
■ PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
■ MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 4 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■ DUAL BANK OPERATIONS
– Read within one Bank while Program or Erase within the other
– No delay between Read and Write operations
■ BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
– WP for Block Locking
■ COMMON FLASH INTERFACE (CFI)
■ 64 bit SECURITY CODE
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR008E: A2h
– Device Code, M59DR008F: A3h
產(chǎn)品屬性
- 型號(hào):
M59DR008
- 制造商:
STMICROELECTRONICS
- 制造商全稱(chēng):
STMicroelectronics
- 功能描述:
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
2016+ |
SOP |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢(xún)價(jià) | ||
ST |
24+ |
BGA-M48P |
2560 |
絕對(duì)原裝!現(xiàn)貨熱賣(mài)! |
詢(xún)價(jià) | ||
ST |
2020+ |
原廠(chǎng)封裝 |
35000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存 |
詢(xún)價(jià) | ||
ST |
25+23+ |
SOP |
22003 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
ST/意法 |
22+ |
BGA |
50000 |
只做原裝假一罰十,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
ST |
24+ |
BGA-48 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢(xún)價(jià) | ||
ST |
2138+ |
BGA |
8960 |
專(zhuān)營(yíng)BGA,QFP原裝現(xiàn)貨,假一賠十 |
詢(xún)價(jià) | ||
ST |
24+ |
BGA |
354 |
現(xiàn)貨 |
詢(xún)價(jià) | ||
ST |
2020+ |
BGA |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ST |
24+ |
BGA |
2211 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) |
相關(guān)庫(kù)存
更多- M58WT032QB70ZB6E
- M58WT032KT
- M58WT032KB
- M58WR128E-ZBT
- M58WR128ETZB
- M58WR128ET80ZB6T
- M58WR128ET70ZB6T
- M59DR008E
- M59DR008E100N1T
- M59DR008E100N6T
- M59DR008E100ZB1T
- M59DR008E100ZB6T
- M59DR008E120N1T
- M59DR008E120N6T
- M59DR008E120ZB1T
- M59DR008E120ZB6T
- M59DR008EN
- M59DR008EZB
- M59DR008F
- M59DR008F100N1T
- M59DR008F100N6T
- M59DR008F100ZB1T
- M59DR008F100ZB6T
- M59DR008F120N1T
- M59DR008F120N6T
- M59DR008F120ZB1T
- M59DR008F120ZB6T
- M59DR008FN
- M59DR008FZB