M58BW016DB80ZA3FT中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length can be configured and can be easily adapted to a large variety of system clock frequencies and microprocessors. All writes are asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.

The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kb each and 31 main blocks of 512 Kb each. In the M58BW016DT and M58BW016FT the parameter blocks are located at the top of the address space whereas in the M58BW016DB and M58BW016FB, they are located at the bottom.

Program and Erase commands are written to the command interface of the memory. An on chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.

Features

■ Supply voltage

– VDD = 2.7 V to 3.6 V for Program, Erase and Read

– VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers

– VPP = 12 V for Fast Program (optional)

■ High performance

– Access times: 70, 80 ns

– 56 MHz effective zero wait-state Burst Read

– Synchronous Burst Read

– Asynchronous Page Read

■ Hardware block protection

– WP pin for Write Protect of the 4 outermost

parameter blocks and all main blocks

– RP pin for Write Protect of all blocks

■ Optimized for FDI drivers

– Fast Program / Erase Suspend latency time < 6 μs

– Common Flash interface

■ Memory blocks

– 8 parameters blocks (top or bottom)

– 31 main blocks

■ Low power consumption

– 5 μA typical Deep Power-down

– 60 μA typical standby for M58BW016DT/B

150 μA typical standby for M58BW016FT/B

– Automatic standby after Asynchronous Read

■ Electronic signature

– Manufacturer code: 20h

– Top device code: 8836h

– Bottom device code: 8835h

■ ECOPACK? packages available