M45PE40-VMW6G集成電路（IC）的存儲器規(guī)格書PDF中文資料

SUMMARY DESCRIPTION

The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 2048 pages, or 524288 bytes.

The memory can be erased a page at a time, using the Page Erase instruction, or a sector at a time, using the Sector Erase instruction.

FEATURES SUMMARY

■ 4Mbit of Page-Erasable Flash Memory

■ Page Write (up to 256 Bytes) in 11ms (typical)

■ Page Program (up to 256 Bytes) in 1.2ms (typical)

■ Page Erase (256 Bytes) in 10ms (typical)

■ Sector Erase (512 Kbit)

■ 2.7 to 3.6V Single Supply Voltage

■ SPI Bus Compatible Serial Interface

■ 33MHz Clock Rate (maximum)

■ Deep Power-down Mode 1μA (typical)

■ Electronic Signature

– JEDEC Standard Two-Byte Signature (4013h)

■ More than 100000 Write Cycles

■ More than 20 Year Data Retention

■ Packages

– ECOPACK? (RoHS compliant)