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M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0

512Mbit(x16,MultipleBank,Multi-Level,Burst)FlashMemory128Mbit(Burst)PSRAM,1.8VSupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0ZAC

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZAC

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0ZAC

512Mbit(x16,MultipleBank,Multi-Level,Burst)FlashMemory128Mbit(Burst)PSRAM,1.8VSupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0ZACF

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZACF

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M36P0R9070E0ZACF

512Mbit(x16,MultipleBank,Multi-Level,Burst)FlashMemory128Mbit(Burst)PSRAM,1.8VSupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    M36P0R9070E0ZACE

  • 制造商：

    Micron Technology Inc

  • 功能描述：

    WIRELESS - Trays

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Micron
1844+
TFBGA107
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
MICRON/美光
23+
BGA
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
ST
07+
BGA
58
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
 詢價(jià)
ST/意法
21+
BGA
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)
 詢價(jià)
ST/意法
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
2022
BGA
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ST
BGA
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
ST/意法
22+
BGA
3000
原裝正品,支持實(shí)單
 詢價(jià)
ST
23+
BGA
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
BGA
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
更多M36P0R9070E0ZACE供應(yīng)商 更新時(shí)間2024-11-19 19:28:00

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