首頁>M36P0R8070E0ZACF>規(guī)格書詳情

M36P0R8070E0ZACF中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書

M36P0R8070E0ZACF
廠商型號

M36P0R8070E0ZACF

功能描述

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

文件大小

638.18 Kbytes

頁面數(shù)量

22

生產(chǎn)廠商 numonyx
企業(yè)簡稱

NUMONYX

中文名稱

numonyx官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-11-20 11:34:00

M36P0R8070E0ZACF規(guī)格書詳情

Description

The M36P0R8070E0 combines two memories in a multichip package:

● 256-Mbit multiple bank Flash memory (the M58PR256J)

● 128-Mbit PSRAM (the M69KB128AA).

This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Numonyx distributor.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory is offered in a stacked TFBGA107 package, and it is supplied with all the bits erased (set to ‘1’).

Features

■ Multichip package

– 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory

– 1 die of 128 Mbit (8 Mb x16) PSRAM

■ Supply voltage

– VDDF = VCCP = VDDQ = 1.7 to 1.95 V

– VPPF = 9 V for fast program (12 V tolerant)

■ Electronic signature

– Manufacturer code: 20h

– Device code: 8818

■ Package

– ECOPACK?

Flash memory

■ Synchronous/asynchronous read

– Synchronous burst read mode: 108 MHz, 66 MHz

– Asynchronous page read mode

– Random access: 93 ns

■ Programming time

– 4 μs typical Word program time using Buffer Enhanced Factory Program command

■ Memory organization

– Multiple bank memory array: 32 Mbit banks

– Four EFA (extended flash array) blocks of 64 Kbits

■ Dual operations

– Program/erase in one bank while read in others

– No delay between read and write operations

■ Security

– 64bit unique device number

– 2112 bit user programmable OTP Cells

■ 100 000 program/erase cycles per block

■ Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked with zero latency

– WPF for block lock-down

– Absolute write protection with VPPF = VSS

■ CFI (common Flash interface)

PSRAM

■ Access time: 70 ns

■ Asynchronous page read

– Page size: 4, 8 or 16 words

– Subsequent read within page: 20 ns

■ Synchronous burst read/write

■ Low power consumption

– Active current: < 25 mA

– Standby current: 200 μA

– Deep power-down current: 10 μA

■ Low power features

– PASR (partial array self refresh)

– DPD (deep power-down) mode

產(chǎn)品屬性

  • 型號:

    M36P0R8070E0ZACF

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    FLASH - Tape and Reel

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
原裝
20+
原裝
56200
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST/意法
23+
BGA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
杰翔達(dá)
23+
17ROHS
6000
BOM配單--可開發(fā)票專業(yè)手機料也回收
詢價
ST
17ROHS
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
ST
23+
BGA
16900
正規(guī)渠道,只有原裝!
詢價
ST
BGA
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
ST/意法
BGA
699839
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ST
23+
BGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
ST/意法
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST/意法
2402+
BGA
8324
原裝正品!實單價優(yōu)!
詢價