M29W800T100M1R中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

■ M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ FASTACCESS TIME: 90ns

■ FAST PROGRAMMING TIME

– 10μs by Byte / 20μs by Word typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-byand AutomaticStand-by

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATARETENTION

– Defectivity below 1ppm/year ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code, M29W800T: 00D7h

– Device Code, M29W800B: 005Bh