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M29W040-120N1R中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
M29W040-120N1R |
功能描述 | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
文件大小 |
205.6 Kbytes |
頁面數(shù)量 |
31 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱 | 意法半導(dǎo)體(ST)集團官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-8 8:30:00 |
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DESCRIPTION
The M29W040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.
The interface is directly compatible with most microprocessors. PLCC32, TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs are available for the TSOP32 (8 x 20mm) package.
■ M29W040 is replaced by the M29W040B
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 100ns
■ BYTE PROGRAMMING TIME: 12μs typical
■ ERASE TIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for P/E.C. Status
■ MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 20μA typical
– Automatic Stand-by mode
■ POWER DOWN SOFTWARE COMMAND
– Power-down mode: 1μA typical
■ 100,000PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
產(chǎn)品屬性
- 型號:
M29W040-120N1R
- 制造商:
STMICROELECTRONICS
- 制造商全稱:
STMicroelectronics
- 功能描述:
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory