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M29F400T

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120M1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120M1TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120M3R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120M3TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120M6R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120M6TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120N1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120N1TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120N3R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120N3TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120N6R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-120N6TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55M1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55M1TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55M3R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55M3TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55M6R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55M6TR

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F400T-55N1R

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
TSOP
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
24+
3000
公司存貨
詢價
ST
97+
TSOP48
3560
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價
ST
1998
91
原裝正品長期供貨,如假包賠包換 徐小姐13714450367
詢價
17+
6200
100%原裝正品現(xiàn)貨
詢價
ST
05+
原廠原裝
4251
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
ST
24+
SSOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價
ST
2016+
SSOP
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品!
詢價
ST
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
ST
16+
原裝正品
510
原裝現(xiàn)貨假一罰十
詢價
更多M29F400T供應(yīng)商 更新時間2024-11-18 15:40:00