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M28F256-90XC6TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

M28F256-90XC6TR
廠商型號(hào)

M28F256-90XC6TR

功能描述

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

文件大小

523.409 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-8-1 10:19:00

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M28F256-90XC6TR規(guī)格書(shū)詳情

DESCRIPTION

The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.

■ FAST ACCESS TIME: 90ns

■ LOW POWER CONSUMPTION

– Standby Current: 100μA Max

■ 10,000 ERASE/PROGRAM CYCLES

■ 12V PROGRAMMING VOLTAGE

■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ EXTENDED TEMPERATURE RANGES

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法
24+
SOP44
22055
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
STM
9535
35
公司優(yōu)勢(shì)庫(kù)存 熱賣中!
詢價(jià)
ST
22+
TSSOP
3000
原裝正品,支持實(shí)單
詢價(jià)
STM
24+
TSSOP40
2568
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨
詢價(jià)
ST
24+
DIP
78
詢價(jià)
STM
20+
DIP
62
全新現(xiàn)貨熱賣中歡迎查詢
詢價(jià)
ST/意法
23+
TSOP40
6000
專業(yè)配單保證原裝正品假一罰十
詢價(jià)
ST
2021+
60000
原裝現(xiàn)貨,歡迎詢價(jià)
詢價(jià)
ST/意法
23+
TSOP
7685
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
STMICROELECT
05+
原廠原裝
4402
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)