M28C16-120K6TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply.

■Fast Access Time: 90 ns at VCC=5V

■Single Supply Voltage:

– 4.5 V to 5.5 V for M28CxxB

– 2.7 V to 3.6 V for M28CxxB-W

■Low Power Consumption

■Fast BYTE and PAGE WRITE (up to 64 Bytes)

–3ms at VCC=4.5 V

–5ms at VCC=2.7 V

■Enhanced Write Detection and Monitoring:

– Data Polling

– Toggle Bit

– Page Load Timer Status

■JEDEC Approved Bytewide Pin-Out

■Software Data Protection

■100000 Erase/Write Cycles (minimum)

■Data Retention (minimum): 40 Years