M24C02-WMN6集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

M24C02-WMN6屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M24C02-WMN6存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

? Compatible with all I2C bus modes:

– 400 kHz

– 100 kHz

? Memory array:

– 1 Kbit (128 bytes) of EEPROM

– 2 Kbit (256 bytes) of EEPROM

– Page size: 16 bytes

? Single supply voltage:

– M24C01/02-W: 2.5 V to 5.5 V

– M24C01/02-R: 1.8 V to 5.5 V

– M24C02-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range)

? Write:

– Byte Write within 5 ms

– Page Write within 5 ms

? Operating temperature range: from -40 °C up to +85 °C

? Random and sequential Read modes

? Write protect of the whole memory array

? Enhanced ESD/Latch-Up protection

? More than 4 million Write cycles

? More than 200-year data retention

? Packages:

– RoHS compliant and halogen-free(ECOPACK?)