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LX5561

InGaAs - E-Mode pHEMT Low Noise Amplifier

DESCRIPTION TheLX5561isalownoiseamplifier(LNA)forWLANapplicationsinthe2.4-2.5GHzfrequencyrange.ThisLNAismanufacturedwithanInGaAsEnhancementmodepseudomorphicHEMT(E-pHEMT)process. Itoperateswithasinglepositivevoltagesupplyof3.3V,withnoisefigureof1.5dBwhi

MicrosemiMicrosemi Corporation

美高森美美高森美公司

LX5561LL

InGaAs - E-Mode pHEMT Low Noise Amplifier

DESCRIPTION TheLX5561isalownoiseamplifier(LNA)forWLANapplicationsinthe2.4-2.5GHzfrequencyrange.ThisLNAismanufacturedwithanInGaAsEnhancementmodepseudomorphicHEMT(E-pHEMT)process. Itoperateswithasinglepositivevoltagesupplyof3.3V,withnoisefigureof1.5dBwhi

MicrosemiMicrosemi Corporation

美高森美美高森美公司

LX5561LL

包裝：帶 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC RF AMP 802.11B/G 2.4GHZ

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

LX5561LL-TR

Package：12-XFQFN 裸露焊盤；包裝：盒 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC RF AMP

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

MPC5561

MicrocontrollerDataSheet

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MS5561C

Highaccuracytemperaturemeasurement

TECTE Connectivity Ltd

泰科電子泰科電子有限公司

MS5561-C

MICROALTIMETER

INTERSEMA

Intersema Sensoric SA

NDL5561P

1000to1600nmOPTICALFIBERCOMMUNICATIONS30mmInGaAsAVALANCHEPHOTODIODEMODULE

DESCRIPTION NDL5531PSeriesisanInGaAsavalanchephotodiodemodulewithsinglemodefiber.Itisdesignedfordetectorsoflongwavelengthtransmissionsystems.Theseriescoversthewavelengthrangebetween1000and1600nm. FEATURES ?SmalldarkcurrentID=5nA ?Smallterminalcapaci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL5561P

1000to1600nmOPTICALFIBERCOMMUNICATIONS50mmInGaAsAVALANCHEPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NDL5561P

1000to1600nmOPTICALFIBERCOMMUNICATIONS50mmInGaAsPINPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    LX5561

  • 制造商：

    MICROSEMI

  • 制造商全稱：

    Microsemi Corporation

  • 功能描述：

    InGaAs - E-Mode pHEMT Low Noise Amplifier

供應(yīng)商型號品牌批號封裝庫存備注價格
MICROSEMI
2016+
MLPQ12
4721
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
MICROSEMI
20+
MLPQ12
32970
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
MICROSEMI/美高森美
24+
65200
詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
MICROCHIP(美國微芯)
2447
QFN-12(2x2)
315000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
MICROSEMI
20+
射頻元件
5255
就找我吧!--邀您體驗愉快問購元件!
 詢價
MICROCHIP(美國微芯)
2021+
QFN-12(2x2)
499
詢價
MICROSEMI/美高森美
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MSC
1535+
12476
詢價
Microsemi Corporation
22+
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多LX5561供應(yīng)商 更新時間2025-3-17 22:58:00

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