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LTE21009R

NPN microwave power transistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT440Ametalceramicflangepackagewiththeemitterconnectedtotheflange. FEATURES ?Diffusedemitterballastingresistors ?Self-alignedprocessentirelyionimplantedandgoldsandwichmetallization ?optimumtemp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

AGN21009

HighSensitivity,with100mWnominaloperatingpower,inacompactandspacesavingcase

FEATURES 1.Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. 2.Highsensitivitysinglesidestable type(Nominaloperatin

PanasonicPanasonic Corporation

松下松下電器

AGN21009

ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY

FEATURES ?Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. ?Outstandingsurgeresistance. Surgewithstandbetweenopencontac

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AGN21009Z

ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY

FEATURES ?Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. ?Outstandingsurgeresistance. Surgewithstandbetweenopencontac

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AGQ21009

Highcapacity2Amp,FlatandCompactpackageTelephoneswitchboard

FEATURES 1.Highcapacity:2A 2.CompactflatbodysavesspaceWithasmallfootprintof 10.6mm(L)×7.2mm(W).417inch(L)×.283inch(W)forspacesavings, italsohasaveryshortheightof5.2mm.205inch.(StandardPCboardtype.) 3.Highsensitivitysinglesidestabletyp

PanasonicPanasonic Corporation

松下松下電器

AGQ21009

ULTRA-SMALLPACKAGEFLATPOLARIZEDRELAY

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ASX21009

HIGHSENSITIVITYRELAYWITHGUARANTEEDLOWLEVELSWITCHINGCAPACITY

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

BU21009MUV

CapacitiveSensorSwitchControlIC

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

ISL21009

HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences

Intersil

Intersil Corporation

ISL21009

Precision,LowNoiseFGA??VoltageReferences

TheISL21009FGA?voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalogtechnology.TheISL21009featuresverylownoise(4μVP-Pfor0.1Hzto10Hz),lowoperatingcurrent(180μA,Max),and3ppm/°Coft

Intersil

Intersil Corporation

ISL21009

HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences

Intersil

Intersil Corporation

ISL21009

HighVoltageInputPrecision,LowNoiseFGA?VoltageReferences

Features ?OutputVoltages........1.250V,2.500V,4.096V,5.000V ?InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV ?InputVoltageRange...................3.5Vto16.5V ?OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) ?SupplyCurr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL21009B

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

ISL21009C

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

ISL21009D

Providinghigh-performancesolutionsforeverylinkinthesignalchain

Intersil

Intersil Corporation

ISL21009MEP

HighVoltageInputPrecision,LowNoiseFGA?VoltageReferences

Features ?SpecificationsperDSCCVIDV62/08629 ?FullMil-TempElectricalPerformancefrom-55°Cto+125°C ?ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite ?FullHomogeneousLotProcessinginWaferFab ?NoCombinationofWaferFabricationLotsinAssembly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL21009MEP

HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences

TheISL21009MEPFGA?voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalogtechnology.TheISL21009MEPfeaturesverylownoise(4.5μVP-Pfor0.1Hzto10Hz),lowoperatingcurrent(180μA,Max),and3ppm

Intersil

Intersil Corporation

LTE21009

NPNmicrowavepowertransistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT440Ametalceramicflangepackagewiththeemitterconnectedtotheflange. FEATURES ?Diffusedemitterballastingresistors ?Self-alignedprocessentirelyionimplantedandgoldsandwichmetallization ?optimumtemp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

MV21009

GaAsVaractorDiodesAbruptJunction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

MicrosemiMicrosemi Corporation

美高森美美高森美公司

供應(yīng)商型號品牌批號封裝庫存備注價格
LTE
23+
SOT-23
45000
原裝正品現(xiàn)貨
 詢價
領(lǐng)晨
23+
SOT23-6
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
LINEAR/凌特
2021+
MSOP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
LINEAR/凌特
19+
MSOP
1200
進(jìn)口原裝現(xiàn)貨
 詢價
SAMSUNG/三星
21+
65200
詢價
原廠
13+
IC
1
普通
 詢價
LITE-ON
20+
光電元件
9136
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
LITEON/光寶
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
LITEON/光寶
24+23+
DIP
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
 詢價
LITEON/光寶
23+
DIP
20000
原裝正品 歡迎咨詢
 詢價
更多LTE21009R供應(yīng)商 更新時間2024-11-5 8:26:00

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