BGT24LTR11N16

Marking：LTR11；Package：TSNP-16-9；Silicon Germanium 24GHz Radar Transceiver MMIC

Features ?24GHztransceiverMMIC ?FullyintegratedlowphasenoiseVCO ?BuiltintemperaturecompensationcircuitforVCOstabilization ?Homodynequadraturereceiver ?Frequencydivider ?Lowpowerconsumption ?FullyESDprotecteddevice ?SingleendedRFandIFterminals ?200GHzb

CLV8T164QWBQARQ1

Marking：LT164Q；Package：WQFN；SN74LV8T164-Q1 Automotive 8-Bit Parallel-Load Shift Register With Logic-Level Shifter

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?AvailableinwettableflankQFNpackage ?Latchinglogicwithknownpower-upstateprovides consiste

CLV8T165QWBQBRQ1

Marking：LT165Q；Package：WQFN；SN74LV8T165-Q1 Automotive Parallel-Load 8-Bit Shift Registers

1Features ?Wideoperatingrangeof1.8Vto5.5V ?Single-supplyvoltagetranslator (refertoLVxTEnhancedInputVoltage): –Uptranslation: ?1.2Vto1.8V ?1.5Vto2.5V ?1.8Vto3.3V ?3.3Vto5.0V –Downtranslation: ?5.0V,3.3V,2.5Vto1.8V ?5.0V,3.3Vto2.5V

CLV8T594QWBQBRQ1

Marking：LT594Q；Package：WQFN；SN74LV8T594-Q1 Automotive Octal Shift Register with Output Registers

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Latchinglogicwithknownpower-upstateprovides consistentstart-upbehavior ?Wideoperatingrang

CLV8T595QWBQBRQ1

Marking：LT595Q；Package：WQFN；SN74LV8T595-Q1 Automotive 8-Bit Shift Register with Tri-State Outputs and Logic-Level Shifter

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?AvailableinwettableflankQFNpackage ?Latchinglogicwithknownpower-upstateprovides consiste

CLV8T596QWBQBRQ1

Marking：LT596Q；Package：WQFN；SN74LV8T596-Q1 Automotive 8-bit Serial-Load Shift Register with Open-Drain Output and Logic-Level Shifter

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?AvailableinwettableflankQFNpackage ?Wideoperatingrangeof1.65Vto5.5V ?5.5Vtolerantinpu

D5V0H2U3SO-7

Marking：LTE5；Package：SOT23；DUAL ESD PROTECTION DIODES

Features ?300WPeakPowerDissipationperLine(8/20μsWaveform) ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?2ChannelsUnidirectionalofESDProtection ?Ultra-LowLeakageCurrent:IRM

D5V0HA2U3SO-7

Marking：LTP5；Package：SOT23；DUAL ESD PROTECTION DIODES

Features ?300WPeakPowerDissipationperLine(8/20μsWaveform) ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?2ChannelsUnidirectionalofESDProtection ?Ultra-LowLeakageCurrent:IRM

KTS1678BEUQ-TR

Marking：LTXXYYZZZZ；Package：WLCSP28；Surge Protected, Single Input, Dual Output Load Switch with OVP

Features ?SingleInput,DualOutputLowOn-Resistance Switch ?VBUStoOUT:typ.23mΩ ?VBUStoSYS:typ.30mΩ(ReverseBlocking) ?WideInputVoltageRange:2.7V–13.5V ?VBUSAbsMax:28V ?SurgeandESDProtectedInput ?SurgeProtection ■IEC61000-4-5:>±100V ?ESDProtection

LT11004V

Marking：LT11004；High capacity in a slim SIL package

GENERALDESCRIPTION: 1.HighcapacitytypepowerPhotoMOS. Canswitchawiderangeofcurrentsandvoltages.Cancontrol varioustypesofloads,fromverysmallloadstoamax.4.5AAC/DC currentforsequencers,motors,andlamps. 2.Lowon-resistanceandhighsensitivity. Lowon-resistance