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LP6836中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書

LP6836
廠商型號

LP6836

功能描述

MEDIUM POWER PHEMT

文件大小

35.54 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Filtronic Compound Semiconductors
企業(yè)簡稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-20 19:10:00

LP6836規(guī)格書詳情

DESCRIPTION AND APPLICATIONS

The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.

FEATURES

? 25 dBm Output Power at 1-dB Compression at 18 GHz

? 9.5 dB Power Gain at 18 GHz

? 55 Power-Added Efficiency

? Source Vias to Backside Metallization

產(chǎn)品屬性

  • 型號:

    LP6836

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    PACKAGED MEDIUM POWER PHEMT

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