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LP3000中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書

LP3000
廠商型號

LP3000

功能描述

2W Power PHEMT

文件大小

49.74 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Filtronic Compound Semiconductors
企業(yè)簡稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-2-18 13:30:00

LP3000規(guī)格書詳情

DESCRIPTION AND APPLICATIONS

The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 3000 μm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.

FEATURES

? +33.5 dBm Typical Power at 18 GHz

? 7 dB Typical Power Gain at 18 GHz

? +30.5 dBm at 3.3V Battery Voltage

? Low Intermodulation Distortion

? 45 Power-Added-Efficiency at 18 GHz

產(chǎn)品屬性

  • 型號:

    LP3000

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    2W Power PHEMT

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