首頁>LMG3526R030>規(guī)格書詳情
LMG3526R030中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
LMG3526R030 |
功能描述 | LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting |
文件大小 |
3.05963 Mbytes |
頁面數(shù)量 |
48 頁 |
生產(chǎn)廠商 | Texas Instruments |
企業(yè)簡(jiǎn)稱 |
TI【德州儀器】 |
中文名稱 | 美國(guó)德州儀器公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-12-28 13:31:00 |
LMG3526R030規(guī)格書詳情
1 Features
? 650-V GaN-on-Si FET with integrated gate driver
– Integrated high precision gate bias voltage
– 200-V/ns FET hold-off
– 2-MHz switching frequency
– 20-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
– Operates from 7.5-V to 18-V supply
? Robust protection
– Cycle-by-cycle overcurrent and latched shortcircuit
protection with < 100-ns response
– Withstands 720-V surge while hard-switching
– Self-protection from internal overtemperature
and UVLO monitoring
? Advanced power management
– Digital temperature PWM output
? Top-side cooled 12-mm × 12-mm VQFN package
separates electrical and thermal paths for lowest
power loop inductance
? Zero-voltage detection feature that facilitates softswitching
converters
2 Applications
? Switch-mode power converters
? Merchant network and server PSU
? Merchant telecom rectifiers
? Solar inverters and industrial motor drives
? Uninterruptable power supplies
3 Description
The LMG3526R030 GaN FET with integrated driver
and protections is targeting switch-mode power
converters and enables designers to achieve new
levels of power density and efficiency.
The LMG3526R030 integrates a silicon driver that
enables switching speed up to 150 V/ns. TI’s
integrated precision gate bias results in higher
switching SOA compared to discrete silicon gate
drivers. This integration, combined with TI's lowinductance
package, delivers clean switching and
minimal ringing in hard-switching power supply
topologies. Adjustable gate drive strength allows
control of the slew rate from 20 V/ns to 150 V/ns,
which can be used to actively control EMI and
optimize switching performance.
Advanced features include digital temperature
reporting, fault detection, and zero-voltage detection
(ZVD). The temperature of the GaN FET is reported
through a variable duty cycle PWM output. Faults
reported include overtemperature, overcurrent, and
UVLO monitoring. ZVD feature can provide a pulse
output from ZVD pin when zero-voltage switching
(ZVS) is realized.
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TI(德州儀器) |
2021+ |
8000 |
原裝現(xiàn)貨,歡迎詢價(jià) |
詢價(jià) | |||
TI/德州儀器 |
22+ |
QFM-9 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
TI |
24+ |
9-QFM(8x6) |
20000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
TI/德州儀器 |
18+ |
QFM |
8257 |
向鴻專營(yíng)TI ADI,代理渠道可訂貨 |
詢價(jià) | ||
TI/德州儀器 |
22+ |
QFM-9 |
13000 |
原裝正品 |
詢價(jià) | ||
TI(德州儀器) |
23+ |
QFM-9 |
10000 |
只做原裝 假一賠萬 |
詢價(jià) | ||
TI |
24+ |
SMD |
15600 |
門驅(qū)動(dòng)器 |
詢價(jià) | ||
TI |
22+ |
QFM (MOF) |
6000 |
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303 |
詢價(jià) | ||
PHILIPS/飛利浦 |
23+ |
DIP56 |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
N/A |
2021+ |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) |