LM2105DR中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

1 Features

? Drives two N-channel MOSFETs in half-bridge

configuration

? Integrated bootstrap diode

? 5-V typical undervoltage lockout on GVDD

? 107-V absolute maximum voltage on BST

? –19.5-V absolute maximum negative transient

voltage handling on SH

? 0.5-A/0.8-A peak source/sink currents

? 115-ns typical propagation delay

2 Applications

? Brushless-DC (BLDC) motors

? Permanent magnet synchronous motors (PMSM)

? Cordless vacuum cleaners

? Cordless garden and power tools

? E-bikes and e-scooters

? Battery test equipment

? Offline uninterruptible power supply (UPS)

? General-purpose MOSFET or IGBT driver

3 Description

The LM2105 is a compact, high-voltage gate driver

designed to drive both the high-side and the lowside

N-channel MOSFETs in a synchronous buck or

a half-bridge configuration. The integrated bootstrap

diode saves board space and reduces system cost by

eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative

voltage handling on the SH pin improve the system

robustness in high noise applications. The small,

thermally-enhanced 8-pin WSON package improves

PCB layout by allowing the driver to be placed closer

to the motor phases. The LM2105 is also available

in an 8-pin SOIC package compatible with industry

standard pinouts. Undervoltage lockout (UVLO) is

provided on both the low-side and the high-side power

rails for protection during power up and power down.