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LED830

BlueLEDLamp

ROITHNER

Roithner LaserTechnik GmbH

LS830

ULTRALOWLEAKAGELOWDRIFTMONOLITHICDUALN-CHANNELJFET

FEATURES ULTRALOWDRIFT│ΔVGS1-2/ΔT│=5μV/oCmax. ULTRALOWNOISEIG=80fATYP. LOWNOISEen=70nV/√HzTYP. LOWCAPACITANCECISS=3pfmax.

LINEAR

Linear Integrated Systems

LS830

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LS830_PDIP

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LT830

PhotoDMOS-FETRelay

Description TheLT830isa1-FormAsolidstaterelayinan6pinDIPpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside. Fe

LETEXLETEX technology corp

臺(tái)灣麗太麗太科技股份有限公司

M830

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤(rùn)微電子華潤(rùn)微電子有限公司

M830D

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤(rùn)微電子華潤(rùn)微電子有限公司

MANO830

PCIExpressMiniCardsupported

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

MAX830

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX830CWE

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR830

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

MBR830

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc

HY

HY ELECTRONIC CORP.

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-8.0Amperes FEATURES ?TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ?Constructionutilizesvoid-freemoldedplastictechnique ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?High

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    L830-C

  • 制造商:

    Pass & Seymour/Legrand

  • 功能描述:

    CONN 3W30A480V T/L

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FUBOCOM
2020+
80000
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FUBOCOM
22+
20000
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22+
MOD
9800
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FIBOCOM
15+
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10
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FIBOCOM
23+
MOD
30
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FIBOCOM
23+
MOD
10000
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BEL
2016+
變壓器
8850
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23+
13000
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24+
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11050
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2021+
SMD
100500
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更多L830-C供應(yīng)商 更新時(shí)間2024-12-25 15:22:00