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KUWTN-21A2SLASHQ

Plug-in Signal Conditioners K-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

AH21A2

PrivacyMaskFunction

A1PROS

A1 PROs co., Ltd.

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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NA
168
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