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KSMB10N60

Green device available.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF10N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KX10N60F

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MDF10N60B

N-ChannelMOSFET600V,10A,0.7(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF10N60BTH

N-ChannelMOSFET600V,10A,0.7(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF10N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF10N60GTH

N-ChannelMOSFET600V,10A,0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDF10N60GTH

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDFS10N60D

N-ChannelMOSFET600V,10A,0.75(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS10N60DTH

N-ChannelMOSFET600V,10A,0.75(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS10N60DTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP10N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MDP10N60G

N-ChannelMOSFET600V,10A,0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDP10N60GTH

N-ChannelMOSFET600V,10A,0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDP10N60GTH

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages ?LCD&PDPTV ?Powersupply ?Sw

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MHF10N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MS10N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSF10N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MT10N60C

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MTN10N60BFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

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KERSEMI
23+
TO-263
10000
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KERSEMI
TO-263
22+
6000
十年配單,只做原裝
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KERSEMI
23+
TO-263
6000
原裝正品,支持實(shí)單
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KERSEMI
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
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KERSEMI
24+
TO-263
12300
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KERSEMI
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TO263
13000
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KUU
23+
SMB
6000
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán)
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KUU
21+
SMB
4000
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HOKURIKU
6000
面議
19
DIP/SMD
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KUU
23+
0402
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠(chǎng)技術(shù)支持!!!
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更多KSMB10N60供應(yīng)商 更新時(shí)間2025-1-6 10:06:00