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KSM58N08

80V N-Channel MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

FQA58N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA58N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQAF58N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQAF58N08

80VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB58N08

80VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI58N08

80VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP58N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP58N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=57.5A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.024Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF58N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.024Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
KERSEMI
TO-220
22+
6000
十年配單,只做原裝
 詢價
KERSEMI
23+
TO-220
6000
原裝正品，支持實單
 詢價
KERSEMI
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
KERSEMI
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
KERSEMI
23+
TO-TO-220
13000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
24+
DIP
17
詢價
SAMSUNG
24+
DIP30
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
SAMSANG
19+
DIP30
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SEC
23+
DIP30
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
SAMSUNG
22+
DIP30
8000
原裝正品支持實單
 詢價
更多KSM58N08供應商 更新時間2025-3-23 14:02:00

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