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CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

TCH35P10ROJE

VeryLowInductanceDesign

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

供應(yīng)商型號品牌批號封裝庫存備注價格
KIA 半導(dǎo)體
2447
TO-252-2(DPAK)
105000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
KIA
23+
TO-252
28000
原裝正品
 詢價
KIA
23+
TO-252
12800
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
24+
N/A
53000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
KIA
23+
TO-252
2500
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
KIA
24+
TO-252
56000
公司進(jìn)口原裝現(xiàn)貨 批量特價支持
 詢價
KIA
20+
TO-252
2500
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢價
KIA
23+
TO-252
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
05+
原廠原裝
138
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
KIA
23+24
TO-220
16979
專業(yè)經(jīng)營各種場效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
 詢價
更多KIA35P10AD供應(yīng)商 更新時間2025-3-8 15:00:00

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