亚洲色中文字幕在线播放,爱色国产一区二区在线,亚洲国模私拍一级无码

首頁 >KF4N20LDI>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
KF4N20LDI	文件：601.66 Kbytes Page：6 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC
KF4N20LI	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC
KF4N20LI	文件：601.68 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會社	KEC
KF4N20LW	文件：316.81 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=1A ?Dra	KECKEC CORPORATION KEC株式會社	KEC
KSMD4N20	文件：1.33594 Mbytes Page：8 Pages	200VN-CHANNELMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMU4N20	文件：1.33594 Mbytes Page：8 Pages	200VN-CHANNELMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDD4N20Y	文件：810.9 Kbytes Page：6 Pages	N-ChannelMOSFET200V,3.0A,1.35(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDD4N20YRH	文件：351.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDD4N20YRH	文件：810.9 Kbytes Page：6 Pages	N-ChannelMOSFET200V,3.0A,1.35(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDHT4N20Y	文件：925.43 Kbytes Page：6 Pages	N-ChannelMOSFET200V,0.85A,1.35(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDHT4N20YURH	文件：925.43 Kbytes Page：6 Pages	N-ChannelMOSFET200V,0.85A,1.35(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MTD4N20D	文件：345.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MTD4N20E	文件：268.86 Kbytes Page：10 Pages	TMOSPOWERFET4.0AMPERES200VOLTSRDS(on)=1.2OHM	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MTD4N20E	文件：264.21 Kbytes Page：12 Pages	N??hannelDPAKPowerMOSFET	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MTD4N20I	文件：359.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NDT4N20L	文件：1.51754 Mbytes Page：5 Pages	N-ChannelMOSFET	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司	KEXIN
P4N20	文件：82.95 Kbytes Page：8 Pages	N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR N-CHANNEL200V-1.3?-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STD4N20	文件：271.82 Kbytes Page：9 Pages	N-CHANNEL200V-1.2ohm-4ADPAK/IPAKMESHOVERLAY??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP4N20	文件：82.95 Kbytes Page：8 Pages	N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR N-CHANNEL200V-1.3?-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
UF4N20	文件：136.62 Kbytes Page：3 Pages	4A,200VN-CHANNELPOWERMOSFET	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC

12 >>>

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	KF4N20LD-RTF	KEC	23+	TO252	13000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	KF4N20LD-RTF	KEC	22+	TO252	12000	只做原裝、原廠優(yōu)勢渠道、假一賠十	詢價(jià)
深圳市明嘉萊科技有限公司	KF4N20LD-RTF	KEC	24+	TO252	990000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	KF4N20LD-RTF	KEC	23+	TO252	50	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市艾宇特電子科技有限公司	KF4N20LD-RTF	KEC	23+	TO252	6850	只做原廠原裝正品現(xiàn)貨!假一賠十!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	KF4N20LD-RTF/H	KEC	2018+	TO252	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心	詢價(jià)
深圳市華來深電子有限公司	KF4N20LD-RTF/H	KEC	23+	TO252	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市錦喆鴻電子有限公司	KF4N20LD-RTF/H	KEC	21+	TO252	12588	原裝正品,自己庫存假一罰十	詢價(jià)
瀚佳科技(深圳)有限公司	KF4N20LD-RTF/H	KEC	24+	TO-252	65300	一級代理/放心購買!	詢價(jià)
深圳市凌旭科技有限公司	KF4N20LD-RTF/H	KEC	21+	TO252	1574		詢價(jià)

更多KF4N20LDI供應(yīng)商更新時(shí)間2025-1-13 16:05:00

相關(guān)規(guī)格書

相關(guān)庫存