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KF3N80D/I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會(huì)社

KF3N80DI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會(huì)社

KF3N80F

PowerMOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF3N80F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF3N80I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會(huì)社

KSM3N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB3N80

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF3N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KX3N80

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MS3N80

800VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSF3N80

800VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTM3N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTM3N80

TMOSPOWERFETs3AMPERES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP3N80

TMOSPOWERFETs3AMPERES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

PF3N80HA

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SSF3N80D

MainProductCharacteristics

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

SSF3N80D

800VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

SSF3N80F

MainProductCharacteristics

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

SSF3N80F

800VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

SSFP3N80

StarMOSTPowerMOSFET

Good-Ark

GOOD-ARK Electronics

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50000
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10000
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2022
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80000
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TO-220FP
22+
6000
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TO-220
68900
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更多KF3N80D/I供應(yīng)商 更新時(shí)間2025-1-5 16:00:00