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KF3N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會社

KF3N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會社

KF3N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會社

KF3N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會社

KF3N60P/F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會社

KF3N60PF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會社

KSM3N60

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSM3N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB3N60

ThisN-channelMOSFETSuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD3N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD3N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF3N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB3N60E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB3N60E

TMOSPOWERFET3.0AMPERES600VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM3N60

PowerFieldEffectTransistor

PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTim

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTM3N60

PowerFieldEffectTransistor

PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTim

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTN3N60BFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN3N60FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP3N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MTP3N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    KF3N60I

  • 制造商：

    KEC

  • 制造商全稱：

    KEC(Korea Electronics)

  • 功能描述：

    N CHANNEL MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
KEC
14+
TO-251
2725
就找我吧!--邀您體驗愉快問購元件!
 詢價
KEC
23+
TO-251
10000
公司只做原裝正品
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KEC
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
KEC
21+
TO-251
10000
原裝現(xiàn)貨假一罰十
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KEC
2022
TO-251
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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KEC
2022+
TO-251
50000
原廠代理 終端免費提供樣品
 詢價
KEC
TO-251
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
KEC
23+
TO-251
6000
原裝正品，支持實單
 詢價
KEC
2022+
TO-251
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
KEC
24+
TO-251
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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更多KF3N60I供應商 更新時間2024-12-23 10:00:00

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