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K9K8G08U1A-I中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

K9K8G08U1A-I
廠商型號(hào)

K9K8G08U1A-I

功能描述

FLASH MEMORY

文件大小

1.1455 Mbytes

頁(yè)面數(shù)量

43 頁(yè)

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-18 22:59:00

K9K8G08U1A-I規(guī)格書(shū)詳情

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 2.70V ~ 3.60V

? Organization

- Memory Cell Array : (512M + 16M) x 8bit

- Data Register : (2K + 64) x 8bit

? Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

? Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25μs(Max.)

- Serial Access : 25ns(Min.)

? Fast Write Cycle Time

- Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)

- Data Retention : 10 Years

? Command Driven Operation

? Intelligent Copy-Back with internal 1bit/528Byte EDC

? Unique ID for Copyright Protection

? Package :

- K9F4G08U0A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9K8G08U1A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

產(chǎn)品屬性

  • 型號(hào):

    K9K8G08U1A-I

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SAMSUNG/三星
19+
BGA
14718
進(jìn)口原裝現(xiàn)貨
詢價(jià)
SAMSUNG
2020+
TSOP48
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
SAMSUNG
23+
BGA
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
SAMSUNG/三星
23+
QFN
13000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
sam
23+
NA
150
專(zhuān)做原裝正品,假一罰百!
詢價(jià)
SAMSUNG
20+
BGA
11520
特價(jià)全新原裝公司現(xiàn)貨
詢價(jià)
SAMSUNG/三星
22+
TSOP
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
SAMSUNG
2023+
TSOP
3855
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷(xiāo)售
詢價(jià)
SAMSUNG
23+
TSSOP48
3700
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
SAMSUNG
21+
BGA
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)